Morphology and bond strength of copper wafer bonding
نویسندگان
چکیده
The morphology and bond strength of copper-bonded wafer pairs prepared under different bonding/annealing temperatures and durations are presented. The interfacial morphology was examined by transmission electron microscopy (TEM) while the bond strength was examined from a diesaw test. Physical mechanisms explaining the different roles of post-bonding anneals at temperatures above and below 300°C are discussed. A map summarizing these results provides a useful reference on process conditions suitable for actual microelectronics fabrication and three-dimensional integrated circuits based on Cu wafer bonding.
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